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| SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT605 C1 C1 C2 C2 PARTMARKING DETAIL T605 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 140 120 10 4 1 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 324 ZDT605 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter TurnOn Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 2K 5K 2K 0.5K 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MIN. 140 120 10 0.01 10 10 0.1 1.0 1.5 1.8 1.7 MAX. UNIT V V V A A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=120V VCB=120V, Tamb=100C VCES=120V VEB=8V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* V V V V 100K MHz pF pF s s Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff IC=100mA, VCE=10V f=20MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 325 ZDT605 TYPICAL CHARACTERISTICS 1.8 1.6 - (Volts) 1.4 1.2 IC/IB=100 1.0 0.8 - Gain normalised to 1 Amp -55C +25C +100C +175C 2.5 -55C +25C +100C VCE=5V 2.0 1.5 V 0.6 0.4 0.2 0 1.0 0.5 h 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.6 -55C +25C +100C +175C 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 -55C +25C +100C - (Volts) 1.4 1.2 1.0 0.8 IC/IB=100 - (Volts) V 0.6 0.4 0.01 0.1 1 10 V VCE=5V 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 3 - 326 |
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